AlGe wafer bonding in ultra-high vacuum environment

Wafer Level Packaging Using High Force Bonding of Alge

Wafer Level AlGe Eutectic Bonding for MEMS-Electronic-Photonic Heterogeneous Integration

An AlGe eutectic wafer level bonding process is presented and characterized for heterogeneous integration of silicon photonics, CMOS integrated electronic circuits and active III-V components. Heterogeneous Integration of Photonics and CMOS The technology of silicon photonics integrated circuits (SiPIC) currently finds itself transitioning from research to industrial scale production [1]. The p...

Wafer-to-Wafer Bonding for Microstructure Formation

Wafer-to-wafer bonding processes for microstructure fabrication are categorized and described. These processes have an impact in packaging and structure design. Processes are categorized into direct bonds, anodic bonds, and bonds with intermediate layers. Representative devices using wafer-to-wafer bonding are presented. Processes and methods for characterization of a range of bonding methods a...

Rolling Contact Fatigue in Ultra High Vacuum

Hydrophobic silicon wafer bonding

Wafers prepared by an HF dip without a subsequent water rinse were bonded at room temperature and annealed at temperatures up to 1100 “C. Based on substantial differences between bonded hydrophilic and hydrophobic Si wafer pairs in the changes of the interface energy with respect to temperature, secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), we suggest that h...